High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.
نویسندگان
چکیده
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 degrees C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm(2) V( - 1) s( - 1) respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices.
منابع مشابه
Toward practical gas sensing with highly reduced graphene oxide: a new signal processing method to circumvent run-to-run and device-to-device variations.
Graphene is worth evaluating for chemical sensing and biosensing due to its outstanding physical and chemical properties. We first report on the fabrication and characterization of gas sensors using a back-gated field-effect transistor platform with chemically reduced graphene oxide (R-GO) as the conducting channel. These sensors exhibited a 360% increase in response when exposed to 100 ppm NO(...
متن کاملCarbon black-intercalated reduced graphene oxide electrode with graphene oxide separator for high-performance supercapacitor
We present a general study on a high performance supercapacitor based on intercalated reduced graphene oxide with carbon black nanoparticles. Graphene oxide sheets were synthesized by oxidation and exfoliation of natural graphite and were reduced using hydroiodic acid in the presence of carbon black nanoparticles. Graphene paper was fabricated by one-step procedure via simultaneous reducing and...
متن کاملDielectrophoresis and Chemically Mediated Directed Self-Assembly of Micrometer-Scale Three-Terminal Metal Oxide Semiconductor Field-Effect Transistors
متن کامل
Fabrication of SWCNT-Graphene Field-Effect Transistors
Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as...
متن کاملHigh yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors.
We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devic...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nanotechnology
دوره 21 16 شماره
صفحات -
تاریخ انتشار 2010